A method for forming a titanium nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a virgin titanium nitride layer, where the virgin titanium nitride layer is formed through a chemical vapor deposition (CVD) method employing a tetrakis-diallylamido...http://www.google.de/patents/US5970378?utm_source=gb-gplus-sharePatent US5970378 - Multi-step plasma treatment process for forming low resistance titanium nitride layer
