Using sub-micron technology, silicon on insulator (SOI) rows and islands are formed in a silicon substrate. Trenches are directionally-etched in the silicon substrate, leaving rows of silicon between the trenches. Silicon nitride is then deposited over the trenches, extending partly down the sides of...http://www.google.de/patents/US20020001965?utm_source=gb-gplus-sharePatent US20020001965 - TECHNIQUE FOR PRODUCING SMALL ISLANDS OF SILICON ON INSULATOR
