A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred...http://www.google.de/patents/US6991995?utm_source=gb-gplus-sharePatent US6991995 - Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer
