To provide a method of fabricating a MOS-type transistor of a LDD structure with a gate electrode made of molybdenum, which brings about a reduction in the amount of overlapping between the gate electrode and source/drain, a gate electrode is made of molybdenum and forms a first pattern. The first pattern...http://www.google.de/patents/US6171915?utm_source=gb-gplus-sharePatent US6171915 - Method of fabricating a MOS-type transistor
