A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1xAs with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more...http://www.google.de/patents/US6380552?utm_source=gb-gplus-sharePatent US6380552 - Low turn-on voltage InP Schottky device and method
