Systems and methods for single lithography step interconnection metallization using a stop-etch layer are described. A method that includes depositing a stop-etch layer over a semiconductor device, depositing an interconnect metallization material over the stop-etch layer, performing a single lithography...http://www.google.de/patents/US8110880?utm_source=gb-gplus-sharePatent US8110880 - Systems and methods for interconnect metallization using a stop-etch layer
