High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from...http://www.google.de/patents/US6646293?utm_source=gb-gplus-sharePatent US6646293 - Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
