A transistor device suitable for high voltage and low voltage applications, while maintaining minimum channel lengths. In one embodiment, pocket implants (310) are formed in a minimum channel device causing a reverse channel effect. The reverse channel effect is optimized for the minimum channel length...http://www.google.de/patents/US6417550?utm_source=gb-gplus-sharePatent US6417550 - High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
