An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing...http://www.google.de/patents/US20020197883?utm_source=gb-gplus-sharePatent US20020197883 - Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
