A method of fabricating CMOS circuit devices on an insulator substrate is disclosed in which a solid phase epitaxy process is applied to islands for the individual devices in the same step as the channel dopant implants. An ion species, preferably silicon for a silicon island, is implanted into each...http://www.google.de/patents/US4816893?utm_source=gb-gplus-sharePatent US4816893 - Low leakage CMOS/insulator substrate devices and method of forming the same
