Patent US5227315 - Process of introduction and diffusion of platinum ions in a slice of silicon

A process is provided for introduction and diffusion of platinum ions in a slice of silicon material. The slice of silicon is subjected to a succession of thermal steps at high temperature for the formation of at least one semiconductor device. Later processing steps include the opening of contacts and...http://www.google.de/patents/US5227315?utm_source=gb-gplus-sharePatent US5227315 - Process of introduction and diffusion of platinum ions in a slice of silicon

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Process of introduction and diffusion of platinum ions in a slice of silicon