Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) portions of an upper electrode, etching (141, 201) ferroelectric...http://www.google.de/patents/US7220600?utm_source=gb-gplus-sharePatent US7220600 - Ferroelectric capacitor stack etch cleaning methods
