This invention is a process for forming an effective titanium nitride barrier layer between the upper surface of a polysilicon plug formed in thick dielectric layer and a platinum lower capacitor plate in a dynamic random access memory which is being fabricated on a silicon wafer. The barrier...http://www.google.de/patents/US5717250?utm_source=gb-gplus-sharePatent US5717250 - Sputter and CVD deposited titanium nitride barrier layer between a platinum layer and a polysilicon plug 
