A ROM structure and its method of manufacture using separate parallel trench bit lines for increasing memory component density as well as using a diode as the fundamental memory unit, each diode having a junction formed inside a bit line with a forward biased voltage of about 0.4 V and a reverse biased...http://www.google.de/patents/US5937280?utm_source=gb-gplus-sharePatent US5937280 - Method of manufacturing a ROM
