A plasma reactor with rf power inductively coupled into the reactor chamber to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. Said pedestal is a powered electrode to which power is coupled to control the sheath voltage of the pedestal....http://www.google.de/patents/US5534231?utm_source=gb-gplus-sharePatent US5534231 - Low frequency inductive RF plasma reactor
