An architecture for creating a vertical silicon-on-insulator MOSFET. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and a first source/drain contact region formed in the surface. A relatively thin single crystalline layer is oriented...http://www.google.de/patents/US7078280?utm_source=gb-gplus-sharePatent US7078280 - Vertical replacement-gate silicon-on-insulator transistor
