A magnetoresistive hybrid memory cell includes first and second stacked structures. The first stacked structure includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship separated by a layer of non-magnetic material, wherein the first...http://www.google.de/patents/US7630231?utm_source=gb-gplus-sharePatent US7630231 - Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
