A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable...http://www.google.de/patents/US5536193?utm_source=gb-gplus-sharePatent US5536193 - Method of making wide band gap field emitter
