On a glass substrate, an insulating protective layer comprising SiO2 film is formed, and an active layer comprising a p-Si film is formed thereon. Further, a first gat insulating film comprising an SiN film which serves as a lower layer and a second gate insulating film comprising an SiN film which serves...http://www.google.de/patents/US7572685?utm_source=gb-gplus-sharePatent US7572685 - Method of manufacturing thin film transistor
