One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon substrate using a Local Oxidation of Silicon (LOCOS) process, and a silicon membrane is bonded to the substrate....http://www.google.de/patents/US7482190?utm_source=gb-gplus-sharePatent US7482190 - Micromechanical strained semiconductor by wafer bonding
