Patterning of a layer of material that can be etched with gaseous mixture of oxygen, chlorine, and nitrogen as etchant species, such as a chromium or a chromium-containing compound layer, is accomplished by using a patterned organometallic resist, such as a polymer which contains silicon or germanium....http://www.google.de/patents/US5948570?utm_source=gb-gplus-sharePatent US5948570 - Process for dry lithographic etching
