A method for fabricating metal gates in deep sub-micron CMOS devices. The method blanket deposits a transition metal nitride layer on top of a gate dielectric layer for forming gate electrodes for both a PMOS and an NMOS device. After a cap layer is deposited on top of the gate electrode for PMOS, a...http://www.google.de/patents/US20030162342?utm_source=gb-gplus-sharePatent US20030162342 - METHOD FOR FABRICATING METAL GATES IN DEEP SUB-MICRON DEVICES
