Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over...http://www.google.de/patents/US7741671?utm_source=gb-gplus-sharePatent US7741671 - Capacitor for a semiconductor device and manufacturing method thereof
