It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliability by using the same,...http://www.google.de/patents/US20080124850?utm_source=gb-gplus-sharePatent US20080124850 - Method for manufacturing semiconductor device and heat treatment method
