An embodiment of the invention relates to a method of forming an isolation layer of a flash memory device. An isolation layer is formed using a PSZ-based material and a nitride film of liner form is deposited on a trench before the PSZ film is deposited. An oxide film can be prevented from remaining...http://www.google.de/patents/US8012831?utm_source=gb-gplus-sharePatent US8012831 - Method of forming isolation layer of flash memory device
