Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance...http://www.google.de/patents/US20010042866?utm_source=gb-gplus-sharePatent US20010042866 - INXALYGAZN OPTICAL EMITTERS FABRICATED VIA SUBSTRATE REMOVAL
