A method for fabricating a two-bit flash memory cell is described in which a substrate with a trench formed therein is provided. A conformal tunnel oxide layer is then formed on the substrate, followed by forming polysilicon spacers on the portion of the tunnel oxide layer which covers the sidewalls...http://www.google.de/patents/US6303439?utm_source=gb-gplus-sharePatent US6303439 - Fabrication method for a two-bit flash memory cell
