A transistor formed on a substrate comprises a gate electrode having a lateral extension at the foot of the gate electrode that is less than the average lateral extension of the gate electrode. The increased cross-section of the gate electrode compared to the rectangular cross-sectional shape of a prior...http://www.google.de/patents/US6798028?utm_source=gb-gplus-sharePatent US6798028 - Field effect transistor with reduced gate delay and method of fabricating the same
