A method for forming narrow length transistors by forming a trench in a first layer over a semiconductor substrate. Spacers are then formed within the trench and a gate dielectric is formed between the spacers at the bottom of the trench on the semiconductor substrate. The trench is then filled with...http://www.google.de/patents/US5434093?utm_source=gb-gplus-sharePatent US5434093 - Inverted spacer transistor
