A semiconductor process in which an initial gate dielectric layer is formed on an upper surface of a semiconductor substrate. The initial gate dielectric layer is polished with a chemical mechanical polish to produce a finished gate dielectric layer. A thickness of the finished gate dielectric layer...http://www.google.de/patents/US5985706?utm_source=gb-gplus-sharePatent US5985706 - Polishing method for thin gates dielectric in semiconductor process
