A semiconductor memory device includes: a silicon substrate having a main surface; n+ diffusion layers formed on the main surface of the silicon substrate distanced from each other; HDP oxide films formed on the n+ diffusion layers and deposited on the main surface so as to protrude above the main surface;...http://www.google.de/patents/US7038304?utm_source=gb-gplus-sharePatent US7038304 - Semiconductor memory device and manufacturing method thereof
