A semiconductor-based device includes a channel layer, which includes a distal layer and a proximal layer in contact with the distal layer. The distal layer supports at least a portion of hole conduction for at least one p-channel component, and the proximal layer supports at least a portion of electron...http://www.google.de/patents/US20030057439?utm_source=gb-gplus-sharePatent US20030057439 - Dual layer CMOS devices
