Semiconductor devices and fabrication methods are presented, in which transistor gate structures are created using doped metal silicide materials. Upper and lower metal silicides are formed above a gate dielectric, wherein the lower metal silicide is doped with n-type impurities for NMOS gates and with...http://www.google.de/patents/US7148546?utm_source=gb-gplus-sharePatent US7148546 - MOS transistor gates with doped silicide and methods for making the same
