A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect transistor having a gate conductor...http://www.google.de/patents/US20060033165?utm_source=gb-gplus-sharePatent US20060033165 - MOSFET structure with multiple self-aligned silicide contacts
