A semiconductor power device includes a plurality of groups of stripe-shaped trenches extending in a silicon region over a substrate, and a contiguous sinker trench completely surrounding each group of the plurality of stripe-shaped trenches so as to isolate the plurality of groups of stripe-shaped trenches...http://www.google.de/patents/US8026558?utm_source=gb-gplus-sharePatent US8026558 - Semiconductor power device having a top-side drain using a sinker trench
