A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon...http://www.google.de/patents/US5618345?utm_source=gb-gplus-sharePatent US5618345 - Method of producing self-supporting thin film of silicon single crystal
