The present invention provides a novel MOS transistor structure and method of fabrication. To make this device, a gate electrode is formed on a silicon substrate first and a pair of shallow trenches with a depth of between 200.ANG. to 500.ANG. are formed apart on portions of the silicon substrate adjacent...http://www.google.de/patents/US5538909?utm_source=gb-gplus-sharePatent US5538909 - Method of making a shallow trench large-angle-tilt implanted drain device
