Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can provide a trench MOS transistor having an up-drain structure. The semiconductor device can include a first conductive type well in a semiconductor substrate, a second conductive type...http://www.google.de/patents/US8030705?utm_source=gb-gplus-sharePatent US8030705 - Semiconductor device and method of fabricating the same
