In an improved EASB programming scheme for a flash device (e.g. a NAND flash device), the number of word lines separating a selected word line (to which a program voltage is applied) and an isolation word line (to which an isolation voltage is applied) is adjusted as a function (e.g. inverse function)...http://www.google.de/patents/US7511995?utm_source=gb-gplus-sharePatent US7511995 - Self-boosting system with suppression of high lateral electric fields
