An MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) of the present invention comprises two source.multidot.drain impurity regions formed spaced apart from each other in a semiconductor substrate. At least a drain side of the two impurity regions has a so called LDD structure in which a region...http://www.google.de/patents/US5258319?utm_source=gb-gplus-sharePatent US5258319 - Method of manufacturing a MOS type field effect transistor using an oblique ion implantation step
