A semiconductor substrate is arranged to have a DRAM area in which to form at a high density gate electrodes of transistors serving as DRAM components, and a peripheral circuit area in which to form at a relatively low density gate electrodes of transistors as peripheral circuit components. A resist...http://www.google.de/patents/US6331462?utm_source=gb-gplus-sharePatent US6331462 - Manufacturing method of a semiconductor device for desired circuit patterns
