A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two guard rings in an implant and drive system. A...http://www.google.de/patents/US6525389?utm_source=gb-gplus-sharePatent US6525389 - High voltage termination with amorphous silicon layer below the field plate
