Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixture can reduce...http://www.google.de/patents/US6787061?utm_source=gb-gplus-sharePatent US6787061 - Copper polish slurry for reduced interlayer dielectric erosion and method of using same
