The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment...http://www.google.de/patents/US7223677?utm_source=gb-gplus-sharePatent US7223677 - Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
