Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding...http://www.google.de/patents/US7902057?utm_source=gb-gplus-sharePatent US7902057 - Methods of fabricating dual fin structures
