Provided are a microelectronic device and a method for its manufacture. In one example, the method includes providing a semiconductor substrate layer having a first material (e.g., silicon or silicon germanium). An insulating layer is formed on the semiconductor substrate layer with multiple openings...http://www.google.de/patents/US7547605?utm_source=gb-gplus-sharePatent US7547605 - Microelectronic device and a method for its manufacture
