CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the...http://www.google.de/patents/US7947549?utm_source=gb-gplus-sharePatent US7947549 - Gate effective-workfunction modification for CMOS
