A method for fabricating a metal oxide semiconductor (MOS) transistor comprises forming a source region of a first conductivity type and a drain region of the first conductivity type, which are separated from each other by a channel region, in upper regions of a semiconductor substrate, forming a gate...http://www.google.de/patents/US7538003?utm_source=gb-gplus-sharePatent US7538003 - Method for fabricating MOS transistor
