Methods for fabricating a wafer structure having a strained silicon utility layer are described. In an embodiment, the method includes providing a prototype wafer having at least a support substrate and a strained silicon model layer upon the support substrate, and then providing a relaxed silicon-germanium...http://www.google.de/patents/US7465646?utm_source=gb-gplus-sharePatent US7465646 - Methods for fabricating a wafer structure having a strained silicon utility layer
