A semiconductor device is disclosed and includes a drain region of a first conductivity type, having a first major surface. Diffused into the drain region is a body region of a second conductivity type. A source region is diffused in the body region and it has a general polygonal shape when viewed at...http://www.google.de/patents/US6492663?utm_source=gb-gplus-sharePatent US6492663 - Universal source geometry for MOS-gated power devices
